e u r o p e a n p o w e r - s e m i c o n d u c t o r a n d e l e c t r o n i c s c o m p a n y v w k j a n u a r y m a r k e t i n g i n f o r m a t i o n d 2 9 1 s
schnelle gleichrichterdiode fast diode d 291 s elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values periodische spitzensperrspannung 3500v, 4000 v repetitive peak reverse voltage t vj = -40c...140c v rrm 4500 v sto?spitzensperrspannung 3600v, 4100 non-repetitive peak reverse voltage t vj = +25c...140c v rsm 4600 v durchla?strom-grenzeffektivwert / rms forward current i frmsm 700 a dauergrenzstrom / mean forward current t c = 85c i favm 290 a t c = 51c 445 a sto?strom-grenzwert 1) t vj = 25c i fsm 5200 a surge forward current 1) t vj = 125c 4500 a grenzlastintegral t vj = 25c i2t 135000 i2t-value t vj = 125c 100000 a2s kritische periodische ausschaltstromsteilheit t vj = 125c, i fm = 3000 a, v rm = 1600 v (-di/dt) com critical repetitive rate of fall of on - state c = 0,125 f, r = 6 w 700 a/s charakteristische werte / characteristic values durchla?spannung / forward voltage t vj = 125c i fm = 1200 a v f 4,15 v schleusenspannung / threshold voltage t vj = 125c v (to) 1,9 v ersatzwiderstand / forward slope resistance t vj = 125c r t 1,76 m w sperrstrom / reverse current t vj = 125c, v r = 0,67 v rrm i r ca. 30 ma t vj = 125c, v r = v rrm 50 ma rckstromspitze / peak reverse recovery current i fm = 1000 a, -di f /dt = 250 a/s i rm 500 a t vj = 125c; v r(spr) = 1000 v; c = 0,125 f; r = 6 w sperrverz?gerungsladung i fm = 1000 a, -di f /dt = 250 a/s q rr 950 as recovered charge t vj = 125c; v r(spr) = 1000 v; c = 0,125 f; r = 6 w thermische eigenschaften / thermal properties innerer w?rmewiderstand khlfl?che / cooling surface r thjc thermal resistance, junction to case beidseitig / two-sided 0,04 k/w einseitig / single-sided 0,08 k/w bergangs-w?rmewiderstand khlfl?che / cooling surface r thck thermal resistance, case to heatsink beidseitig / two-sided 0,006 k/w einseitig / single-sided 0,012 k/w h?chstzul?ssige sperrschichttemp. / max. junction temperat. t vj max 125 c betriebstemperatur / operating temperature t c op -40...+125 c lagertemperatur / storage temperature t stg -40...+150 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage / case, see appendix seite / page 1 anpre?kraft /clamping force f 9...13 kn gewicht / weight g ca. 250 g luftstrecke / air distance 20 mm kriechstrecke / creepage distance 30 mm feuchteklasse / humidity classification din 40040 c schwingfestigkeit / vibration resistance f = 50 hz 50 m/s2 mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes.
f i g . 1 o n - s t a t e c h a r a c t e r i s t i c s i f = f ( v f ) t v j = 1 2 5 c u p p e r l i m i t o f s c a t t e r r a n g e l o w e r l i m i t o f s c a t t e r r a n g e f i g . 4 p e a k f o r w a r d r e c o v e r y v o l t a g e ( t y p i c a l v a l u e s ) t v j = 1 2 5 c t v j = 2 5 c 1 2 3 4 5 6 d 2 9 1 s _ 0 1 2 0 0 0 1 5 0 0 1 0 0 0 5 0 0 0 i f [ a ] v f [ v ] d 2 9 1 s 0 , 0 3 0 0 , 0 2 5 0 , 0 2 0 0 , 0 1 5 0 , 0 1 0 0 , 0 0 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 d 2 9 1 s _ 0 3 f = 2 0 0 h z f = 5 0 0 h z f = 1 0 0 h z f = 5 0 h z f = 6 0 h z d r t h [ k / w ] e d [ % ] l [ e l ] f i g . 3 d r t h = f ( e d , f r e q u e n c y ) b o t h - s i d e d a n d o n e - s i d e d c o o l i n g c u r r e n t w a v e f o r m : : s q u a r e w a v e p a r a m e t e r : f r e q u e n c y 0 , 1 0 0 0 , 0 7 5 0 , 0 5 0 0 , 0 2 5 0 0 , 0 0 1 0 , 0 1 0 , 1 1 1 0 1 0 0 z ( t h ) j c z ( t h ) p [ k / w ] t [ s ] d 2 9 1 s _ 0 2 2 1 2 3 4 6 8 2 3 4 6 8 2 3 4 6 8 2 3 4 6 8 2 3 4 8 6
d 2 9 1 s f i g . 5 r e v e r s e r e c o v e r y c u r r e n t ( u p p e r l i m i t c a . 9 8 % v a l u e ) i r m = f ( d i / d t ) p a r a m e t e r : i f m t v j 1 2 5 c ; c s = 0 , 1 2 5 f r s = 6 w ; v r ( s p r ) = 1 0 0 0 v 1 0 0 0 1 0 0 1 0 1 0 1 0 0 1 0 0 0 d 2 9 1 s _ 0 4 1 0 0 0 a 6 0 0 a 3 0 0 a 1 0 0 a 2 3 4 5 7 9 2 3 4 5 7 9 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 i r m [ a ] - d i / d t [ a / s ]
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